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NTTS2P03R2
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted) (continued)
Rating
Single Pulse Drain?to?Source Avalanche Energy ? Starting T J = 25 ° C
(V DD = ?30 Vdc, V GS = ?10 Vdc, Peak I L = ?3.0 Apk, L = 65 mH, R G = 25 W )
Maximum Lead Temperature for Soldering Purposes for 10 seconds
Symbol
E AS
T L
Value
292.5
260
Unit
mJ
° C
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted) (Note 6)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage (V GS = 0 Vdc, I D = ?250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V GS = 0 Vdc, V DS = ?30 Vdc, T J = 25 ° C)
(V GS = 0 Vdc, V DS = ?30 Vdc, T J = 125 ° C)
Gate?Body Leakage Current (V GS = ?20 Vdc, V DS = 0 Vdc)
Gate?Body Leakage Current (V GS = +20 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
I GSS
?30
?
?
?
?
?
?
?30
?
?
?
?
?
?
?1.0
?25
?100
100
Vdc
mV/ ° C
m Adc
nAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage (V DS = V GS , I D = ?250 m Adc)
Temperature Coefficient (Negative)
V GS(th)
?1.0
?
?1.7
3.6
?3.0
?
Vdc
Static Drain?to?Source On?State Resistance
R DS(on)
W
(V GS = ?10 Vdc, I D = ?2.48 Adc)
(V GS = ?4.5 Vdc, I D = ?1.24 Adc)
?
?
0.063
0.100
0.085
0.135
Forward Transconductance (V DS = ?15 Vdc, I D = ?1.24 Adc)
g FS
?
3.1
?
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
500
?
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = ?24 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
160
65
?
?
SWITCHING CHARACTERISTICS (Notes 7 & 8)
Turn?On Delay Time
t d(on)
?
10
?
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = ?24 Vdc, I D = ?2.48 Adc,
V GS = ?10 Vdc, R G = 6.0 W )
t r
t d(off)
t f
?
?
?
20
40
35
?
?
?
Turn?On Delay Time
t d(on)
?
16
?
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = ?24 Vdc, I D = ?1.24 Adc,
V GS = ?4.5 Vdc, R G = 6.0 W )
t r
t d(off)
t f
?
?
?
40
30
30
?
?
?
Total Gate Charge
Gate?Source Charge
Gate?Drain Charge
(V DS = ?24 Vdc,
V GS = ?4.5 Vdc,
I D = ?2.48 Adc)
Q tot
Q gs
Q gd
?
?
?
15
3.2
4.0
22
?
?
nC
BODY?DRAIN DIODE RATINGS (Note 7)
Diode Forward On?Voltage
(I S = ?2.48 Adc, V GS = 0 Vdc)
V SD
?
?0.92
?1.3
Vdc
(I S = ?2.48 Adc, V GS = 0 Vdc,
T J = 125 ° C)
?
?0.72
?
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = ?1.45 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
t rr
t a
t b
Q RR
?
?
?
?
38
20
18
0.04
?
?
?
?
ns
m C
6. Handling precautions to protect against electrostatic discharge is mandatory.
7. Indicates Pulse Test: Pulse Width = 300 m sec max, Duty Cycle = 2%.
8. Switching characteristics are independent of operating junction temperature.
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